The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 26, 2016
Filed:
Oct. 16, 2014
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Inventors:
Heon-Bok Lee, Suwon-si, KR;
In-Ho Yeo, Seoul, KR;
Sae-Choon Oh, Seoul, KR;
Suk-Kyun Lee, Yongin-si, KR;
Jung-Ho Lee, Seongnam-si, KR;
Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/30 (2006.01); H01L 29/78 (2006.01); H01L 29/66 (2006.01); H01L 29/40 (2006.01); H01L 29/423 (2006.01); H01L 21/306 (2006.01); H01L 21/308 (2006.01); H01L 21/3213 (2006.01); H01L 21/265 (2006.01); H01L 21/311 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7813 (2013.01); H01L 21/26586 (2013.01); H01L 21/308 (2013.01); H01L 21/30604 (2013.01); H01L 21/31111 (2013.01); H01L 21/32133 (2013.01); H01L 29/407 (2013.01); H01L 29/4236 (2013.01); H01L 29/66734 (2013.01);
Abstract
A split gate trench field effect transistor includes a gate electrode formed in a trench. A shield gate is formed in a trench below the gate electrode and surrounded by an insulating structure to float the shield electrode.