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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9324857 B1

PDFFull Text
Date of Patent:
Apr. 26, 2016

Filed:

Apr. 10, 2015

Semiconductor device manufacturing method

Applicant:

Rohm Co., Ltd., Kyoto, JP;

Inventor:

Toshio Nakajima, Kyoto, JP;

Assignee:

ROHM CO., LTD., Kyoto, JP;

Attorney:

Rabin & Berdo, P.C.

Primary Examiner:

David S Blum

Int. Cl.
CPC ...
H01L 29/76 (2006.01); H01L 29/94 (2006.01); H01L 31/062 (2012.01); H01L 31/113 (2006.01); H01L 31/119 (2006.01); H01L 29/78 (2006.01); H01L 29/66 (2006.01); H01L 29/06 (2006.01); H01L 21/261 (2006.01); H01L 21/263 (2006.01); H01L 21/265 (2006.01); H01L 29/10 (2006.01); H01L 29/167 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7811 (2013.01); H01L 21/261 (2013.01); H01L 21/263 (2013.01); H01L 21/265 (2013.01); H01L 21/26506 (2013.01); H01L 29/0634 (2013.01); H01L 29/1033 (2013.01); H01L 29/167 (2013.01); H01L 29/66477 (2013.01); H01L 29/66712 (2013.01); H01L 29/7802 (2013.01); H01L 29/0696 (2013.01); H01L 29/1095 (2013.01);
Abstract

A semiconductor device includes a p-type semiconductor layer, n-type column regions formed of columnar thermal donors exhibiting an n-type property, a p-type column region interposed between the n-type column regions, the n-type column regions configured to form a super-junction structure in cooperation with the p-type column region, a channel region formed in the semiconductor layer, a source region formed in the channel region, a gate insulator film formed on the semiconductor layer, and a gate electrode formed on the gate insulator film and opposite to the channel region across the gate insulator film.

Find Patent Forward Citations

Nakajima, Toshio. (2016). Semiconductor device manufacturing method (U.S. Patent No. 9324857). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9324857

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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