Lateral power device having low specific on-resistance and using high-dielectric constant socket structure and manufacturing method therefor

Abstract

Provided is a lateral power device having low specific ON-resistance and using a high-dielectric constant socket structure and a manufacturing method therefor, which relate to semiconductor power devices. A source electrode () of the device is of a first conduction type, and a channel region (), a silicon substrate () and an ohmic contact heavily-doped region are of a second conduction type; at least two isolation regions are arranged in an embedded manner in a drift region (); between the isolation regions are the drift region () and the channel region (); each isolation region extends from the source electrode () to a drain electrode (); high-dielectric constant material strips () and first insulation dielectric layers () form boundaries of the bottoms and sidewalls of the isolation regions; the isolation regions are filled with a first filling material (), a second insulation dielectric layer () is arranged on the upper surface of the drift region () and the upper surfaces of the isolation regions, and a gate electrode () directly contacts the first filling material () via holes on the second insulation dielectric layer (); and a source electrode lead-out wire () and a drain electrode lead-out wire () directly contact the source electrode () and the drain electrode () respectively via the holes on the second insulation dielectric layer (). The area of a power device can be greatly reduced on the premise of not reducing the withstand voltage and not increasing the specific ON-resistance.