The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 26, 2016
Filed:
May. 28, 2013
Denso Corporation, Kariya, Aichi-pref., JP;
Masakiyo Sumitomo, Okazaki, JP;
Shigemitsu Fukatsu, Okazaki, JP;
DENSO CORPORATION, Kariya, JP;
Abstract
A semiconductor device includes a first conductivity-type drift layer, a second conductivity-type base layer formed in a front surface portion of the drift layer, a second conductivity-type collector layer formed in the drift layer and separated from the base layer, gate insulation layers formed on a surface of the base layer, gate electrodes individually formed on the gate insulation layers, an emitter layer formed in a front surface portion of the base layer, an emitter electrode electrically connected to the emitter layer and the base layer, and a collector electrode electrically connected to the collector layer. A rate of change in a gate voltage of a part of the gate electrodes is smaller than a rate of change in a gate voltage of a remainder of the gate electrodes. The emitter layer is in contact with only the gate insulation layers provided with the part of the gate electrodes.