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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9324838 B1

PDFFull Text
Date of Patent:
Apr. 26, 2016

Filed:

Jan. 09, 2014

Ldmos power semiconductor device and manufacturing method of the same

Applicant:

Stmicroelectronics S.r.l., Agrate Brianza, IT;

Inventors:

Salvatore Cascino, Gravina di Catania, IT;

Leonardo Gervasi, San Giovanni La Punta, IT;

Antonello Santangelo, Belpasso, IT;

Assignee:

STMicroelectronics S.R.L., Agrate Brianza, IT;

Attorney:

Seed IP Law Group PLLC

Primary Examiner:

Su C Kim

Int. Cl.
CPC ...
H01L 29/00 (2006.01); H01L 29/66 (2006.01); H01L 27/088 (2006.01); H01L 29/417 (2006.01); H01L 29/08 (2006.01); H01L 21/265 (2006.01); H01L 29/40 (2006.01); H01L 21/8234 (2006.01); H01L 29/78 (2006.01); H01L 29/49 (2006.01); H01L 29/10 (2006.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66681 (2013.01); H01L 21/26586 (2013.01); H01L 21/823418 (2013.01); H01L 27/088 (2013.01); H01L 29/0878 (2013.01); H01L 29/0886 (2013.01); H01L 29/404 (2013.01); H01L 29/407 (2013.01); H01L 29/41766 (2013.01); H01L 29/66719 (2013.01); H01L 29/66727 (2013.01); H01L 29/7802 (2013.01); H01L 21/823487 (2013.01); H01L 29/063 (2013.01); H01L 29/0634 (2013.01); H01L 29/1095 (2013.01); H01L 29/4175 (2013.01); H01L 29/4933 (2013.01); H01L 29/66613 (2013.01); H01L 29/7835 (2013.01);
Abstract

An electronic semiconductor device comprising: a semiconductor body, having a first side and a second side opposite to one another and including a first structural region facing the second side, and a second structural region extending over the first structural region and facing the first side; a body region extending in the second structural region at the first side; a source region extending inside the body region; an LDD region facing the first side of the semiconductor body; and a gate electrode. The device comprises: a trench dielectric region extending through the second structural region a first trench conductive region immediately adjacent to the trench dielectric region; and a second trench conductive region in electrical contact with the body region and with the source region. An electrical contact at the second side of the semiconductor body is in electrical contact with the drain region via the first structural region.

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