The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 26, 2016

Filed:

Aug. 12, 2014
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Joseph R. Greco, South Burlington, VT (US);

Qizhi Liu, Lexington, MA (US);

Aaron L. Vallett, Jericho, VT (US);

Robert F. Vatter, St. Albans, VT (US);

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/331 (2006.01); H01L 29/66 (2006.01); H01L 29/732 (2006.01); H01L 29/10 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66287 (2013.01); H01L 21/76879 (2013.01); H01L 29/1004 (2013.01); H01L 29/732 (2013.01); H01L 29/66234 (2013.01); H01L 29/66272 (2013.01);
Abstract

Various particular embodiments include a method of amorphizing a portion of silicon underneath the N+ base section of a PNP transistor structure. After amorphizing, the method can include selectively etching that implant-amorphized silicon to trim the collector-base area and collector-base junction. The selective etching is enhanced because the unimplanted silicon region etches at a distinct rate than the implant-amorphized silicon, allowing for control over the trimming of the collector-base junction.


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