The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 26, 2016
Filed:
Mar. 06, 2015
Kabushiki Kaisha Toshiba, Minato-ku, Tokyo, JP;
Tomoko Matsudai, Shibuya Tokyo, JP;
Yuuichi Oshino, Fuchu Tokyo, JP;
Bungo Tanaka, Ageo Saitama, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
According to one embodiment, a semiconductor device includes a first semiconductor layer, a second semiconductor layer provided in a portion on the first semiconductor layer, a first insulating layer provided on the first semiconductor layer on a terminal region side of the second semiconductor layer, a third semiconductor layer provided on the first semiconductor layer on the terminal region side of the first insulating layer, a second insulating layer provided on the first semiconductor layer on the terminal region side of the third semiconductor layer, a fourth semiconductor layer provided between the first semiconductor layer and the second insulating layer, and a plurality of field plate electrodes provided inside an inter-layer insulating film, the plurality of field plate electrodes having mutually-different distances from the first semiconductor layer.