The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 26, 2016
Filed:
May. 01, 2015
Kabushiki Kaisha Toshiba, Minato-ku, Tokyo, JP;
Tsuneo Ogura, Kanagawa-ken, JP;
Tomoko Matsudai, Tokyo, JP;
Yuuichi Oshino, Tokyo, JP;
Yoshiko Ikeda, Kanagawa-ken, JP;
Kazutoshi Nakamura, Kanagawa-ken, JP;
Ryohei Gejo, Kanagawa-ken, JP;
KABUSHIKI KAISHA TOSHIBA, Tokyo, JP;
Abstract
According one embodiment, a semiconductor device includes: a first electrode; a second electrode; a first semiconductor layer provided between the first electrode and the second electrode and being in contact with the first electrode; a second semiconductor layer including a first part and a second part, and the second part being contact with the first electrode, and the second semiconductor layer having an effective impurity concentration lower than an effective impurity concentration in the first semiconductor layer; a third semiconductor layer provided between the second semiconductor layer and the second electrode, and having an effective impurity concentration lower than an effective impurity concentration in the second semiconductor layer; and a fourth semiconductor layer provided between the third semiconductor layer and the second electrode, and being in contact with the second electrode.