The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 26, 2016
Filed:
Sep. 30, 2014
Applicant:
International Business Machines Corporation, Armonk, NY (US);
Inventors:
Joel P. DeSouza, Putnam Valley, NY (US);
Keith E. Fogel, Hopewell Junction, NJ (US);
Jeehwan Kim, Los Angeles, CA (US);
Ko-Tao Lee, White Plains, NY (US);
Devendra K. Sadana, Pleasantville, NY (US);
Assignee:
INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US);
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/22 (2006.01); H01L 21/38 (2006.01); H01L 29/267 (2006.01); H01L 21/02 (2006.01); H01L 29/78 (2006.01); H01L 29/861 (2006.01); H01L 29/66 (2006.01); H01L 21/477 (2006.01); H01L 21/465 (2006.01);
U.S. Cl.
CPC ...
H01L 29/267 (2013.01); H01L 21/02546 (2013.01); H01L 21/02554 (2013.01); H01L 21/465 (2013.01); H01L 21/477 (2013.01); H01L 29/66969 (2013.01); H01L 29/7848 (2013.01); H01L 29/861 (2013.01);
Abstract
A semiconductor device includes a substrate and a p-doped layer including a doped III-V material on the substrate. An n-type layer is formed on or in the p-doped layer. The n-type layer includes ZnO on the p-doped layer to form an electronic device.