The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 26, 2016
Filed:
Apr. 09, 2015
Mitsubishi Electric Corporation, Tokyo, JP;
MITSUBISHI ELECTRIC CORPORATION, Tokyo, JP;
Abstract
A silicon carbide semiconductor device includes: a silicon carbide semiconductor layer of a first conductivity type; a field insulating film formed on a surface of the silicon carbide semiconductor layer; a Schottky electrode formed on the surface of the silicon carbide semiconductor layer on an inner periphery side relative to the field insulating film, the Schottky electrode being formed to overlap onto the field insulating film; a front-surface electrode that covers the Schottky electrode and extends on the field insulating film beyond a peripheral edge of the Schottky electrode; and a terminal well region of a second conductivity type that is formed to be in contact with a part of the Schottky electrode in an upper part of the silicon carbide semiconductor layer and extends in the silicon carbide semiconductor layer on an outer periphery side relative to a peripheral edge of the front-surface electrode.