The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 26, 2016
Filed:
Apr. 11, 2014
Vanguard International Semiconductor Corporation, Hsinchu, TW;
VANGUARD INTERNATIONAL SEMICONDUCTOR CORPORATION, Hsinchu, TW;
Abstract
A semiconductor device includes a semiconductor layer, a plurality of first doped regions, a gate structure, and second and third doped regions. The semiconductor layer has a first conductivity type. The first doped regions are in parallel disposed in a portion of the semiconductor layer along a first direction and have a second conductivity type and a rectangular top view. The gate structure is disposed over a portion of the semiconductor layer along a second direction, covering a portion of the first doped regions. The second doped region is disposed in the semiconductor layer along the second direction, being adjacent to a first side of the gate structure and having the second conductivity type. The third doped region is formed in the semiconductor layer along the second direction, being adjacent to a second side of the gate structure opposing the first side and having the second conductivity type.