The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 26, 2016
Filed:
Sep. 30, 2014
Applicant:
Infineon Technologies Ag, Neubiberg, DE;
Inventors:
Elmar Falck, Hohenbrunn, DE;
Gerhard Schmidt, Wernberg, AT;
Assignee:
Infineon Technologies AG, Neubiberg, DE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/739 (2006.01); H01L 29/06 (2006.01); H01L 21/761 (2006.01); H01L 21/765 (2006.01);
U.S. Cl.
CPC ...
H01L 29/063 (2013.01); H01L 21/761 (2013.01); H01L 21/765 (2013.01); H01L 29/7393 (2013.01);
Abstract
A semiconductor device has a semiconductor body with a first side and a second side that is arranged distant from the first side in a first vertical direction. The semiconductor device has a rectifying junction, a field stop zone of a first conduction type, and a drift zone of a first conduction type arranged between the rectifying junction and the field stop zone. The semiconductor body has a net doping concentration along a line parallel to the first vertical direction. At least one of (a) and (b) applies: