The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 26, 2016
Filed:
Oct. 15, 2015
Renesas Electronics Corporation, Tokyo, JP;
Kentaro Saito, Kanagawa, JP;
Hiraku Chakihara, Kanagawa, JP;
Renesas Electronics Corporation, Tokyo, JP;
Abstract
The performances of a semiconductor device are improved. The semiconductor device has a first control gate electrode and a second control gate electrode spaced along the gate length direction, a first cap insulation film formed over the first control gate electrode, and a second cap insulation film formed over the second control gate electrode. Further, the semiconductor device has a first memory gate electrode arranged on the side of the first control gate electrode opposite to the second control gate electrode, and a second memory gate electrode arranged on the side of the second control gate electrode opposite to the first control gate electrode. The end at the top surface of the first cap insulation film on the second control gate electrode side is situated closer to the first memory gate electrode side than the side surface of the first control gate electrode on the second control gate electrode side.