The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 26, 2016
Filed:
Oct. 01, 2014
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Inventors:
Raheel Azmat, Suwon-si, KR;
Rwik Sengupta, Hwaseong-si, KR;
Chulhong Park, Seongnam-si, KR;
Kwanyoung Chun, Suwon-si, KR;
Assignee:
SAMSUNG ELECTRONICS CO., LTD., Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/092 (2006.01); H01L 27/02 (2006.01); H01L 21/8238 (2006.01);
U.S. Cl.
CPC ...
H01L 27/092 (2013.01); H01L 21/823871 (2013.01); H01L 27/0207 (2013.01); H01L 21/823828 (2013.01);
Abstract
A semiconductor device includes a substrate including PMOSFET and NMOSFET regions. First and second gate electrodes are provided on the PMOSFET region, and third and fourth gate electrodes are provided on the NMOSFET region. A connection contact is provided to connect the second gate electrode with the third gate electrode, and a connection line is provided on the connection contact to cross the connection contact and connect the first gate electrode to the fourth gate electrode.