The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 26, 2016

Filed:

Oct. 28, 2014
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Junjing Bao, San Diego, CA (US);

Samuel S. S. Choi, Hopewell Junction, NY (US);

Xuesong Li, Hopewell Junction, NY (US);

Shaoning Yao, Wappingers Falls, NY (US);

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/482 (2006.01); H01L 23/532 (2006.01); H01L 21/768 (2006.01); H01L 23/48 (2006.01); B82Y 40/00 (2011.01);
U.S. Cl.
CPC ...
H01L 23/4827 (2013.01); H01L 21/76843 (2013.01); H01L 21/76846 (2013.01); H01L 21/76873 (2013.01); H01L 23/481 (2013.01); H01L 23/53238 (2013.01); B82Y 40/00 (2013.01); H01L 2221/1089 (2013.01); H01L 2924/0002 (2013.01);
Abstract

An interconnect structure and method for fabricating the interconnect structure having enhanced performance and reliability, by utilizing a graphene-based barrier metal layer to block oxygen intrusion from a dielectric layer into the interconnect structure and block copper diffusion from the interconnect structure into the dielectric layer, are disclosed. At least one opening is formed in a dielectric layer. A graphene-based barrier metal layer disposed on the dielectric layer is formed. A seed layer disposed on the graphene-based barrier metal layer is formed. An electroplated copper layer disposed on the seed layer is formed. A planarized surface is formed, wherein a portion of the graphene-based barrier metal layer, the seed layer, and the electroplated copper layer are removed. In addition, a capping layer disposed on the planarized surface is formed.


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