The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 26, 2016

Filed:

Jan. 17, 2014
Applicant:

Ps5 Luxco S.a.r.l., Luxembourg, LU;

Inventor:

Atsushi Maekawa, Tokyo, JP;

Assignee:

PS5 Luxco S.a.r.l., Luxembourg, LU;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/311 (2006.01); H01L 27/108 (2006.01); H01L 21/02 (2006.01); H01L 21/3105 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 21/31116 (2013.01); H01L 21/0217 (2013.01); H01L 21/02115 (2013.01); H01L 21/02164 (2013.01); H01L 21/02274 (2013.01); H01L 21/3105 (2013.01); H01L 21/31144 (2013.01); H01L 27/10844 (2013.01); H01L 27/10894 (2013.01); H01L 21/31138 (2013.01); H01L 21/76816 (2013.01);
Abstract

One method includes sequentially forming an insulating film and a first material film on a semiconductor substrate, forming on the first material film a mask film having a rectangular first opening, and dry-etching the first material film using the mask film as a mask to form an ellipsoidal second opening having its shorter side aligned in a first direction of the first material film. Forming the mask film includes forming a second material film having a side surface that faces the first direction of the first opening, and a third material film having side surfaces facing a second direction of the first opening, and the thickness of the third material film is greater than the thickness of the second material film.


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