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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9324563 B1

PDFFull Text
Date of Patent:
Apr. 26, 2016

Filed:

Jun. 09, 2014

Methods of forming patterns

Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Kyoungmi Kim, Anyang-si, KR;

Joo-Hyung Yang, Suwon-si, KR;

Jaeho Kim, Yongin-si, KR;

Jungsik Choi, Seongnam-si, KR;

Assignee:

Samsung Electronics Co., Ltd., , KR;

Attorney:

Myers Bigel & Sibley, P.A.

Primary Examiner:

Kathleen Duda

Int. Cl.
CPC ...
G03F 7/20 (2006.01); H01L 21/033 (2006.01); H01L 21/308 (2006.01); H01L 21/311 (2006.01); H01L 21/768 (2006.01); H01L 27/108 (2006.01); H01L 27/115 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0337 (2013.01); G03F 7/20 (2013.01); H01L 21/0338 (2013.01); H01L 21/3086 (2013.01); H01L 21/31144 (2013.01); H01L 21/76816 (2013.01); H01L 27/10891 (2013.01); H01L 27/11582 (2013.01);
Abstract

Methods of forming patterns are provided. The methods may include sequentially forming an etch-target layer and a photoresist layer on a substrate, exposing two first portions of the photoresist layer to light to transform the two first portions into two first photoresist patterns and exposing a second portion of the photoresist layer to light to transform the second portion into a second photoresist pattern disposed between the two first photoresist patterns. The method may also removing portions of the photoresist layer to leave the two first photoresist patterns and the second photo resist pattern on the etch-target layer such that the etch-target layer is exposed.

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