The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 26, 2016

Filed:

Aug. 13, 2014
Applicant:

Kabushiki Kaisha Toshiba, Minato-ku, Tokyo, JP;

Inventor:

Ryousuke Takizawa, Naka Kanagawa, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 17/00 (2006.01); G11C 29/00 (2006.01); G11C 11/16 (2006.01); G11C 17/16 (2006.01); G11C 29/44 (2006.01);
U.S. Cl.
CPC ...
G11C 29/70 (2013.01); G11C 11/161 (2013.01); G11C 11/1675 (2013.01); G11C 17/16 (2013.01); G11C 2029/4402 (2013.01);
Abstract

According to one embodiment, a nonvolatile memory includes a memory area including a first magnetoresistive element, and a fuse circuit including a second magnetoresistive element serving as an anti-fuse element and configured to store correction information of the memory area when a defect exists in the memory area. The first magnetoresistive element includes a first storage layer, a first reference layer, and a first insulating film between the first storage layer and the first reference layer. The second magnetoresistive element includes a second storage layer, a second reference layer, and a second insulating film between the second storage layer and the second reference layer.


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