The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 26, 2016
Filed:
Jan. 16, 2014
Applicant:
Qualcomm Incorporated, San Diego, CA (US);
Inventors:
Hari M. Rao, San Diego, CA (US);
Xiaochun Zhu, San Diego, CA (US);
Assignee:
QUALCOMM Incorporated, San Diego, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01); G11C 11/16 (2006.01); H01L 43/12 (2006.01); G11C 7/14 (2006.01); G11C 13/00 (2006.01);
U.S. Cl.
CPC ...
G11C 11/1673 (2013.01); G11C 7/14 (2013.01); G11C 11/16 (2013.01); G11C 13/004 (2013.01); H01L 43/12 (2013.01); Y10T 29/49117 (2015.01);
Abstract
Systems and method for reading/sensing data stored in magnetoresistive random access memory (MRAM) cells using magnetically annealed reference cells. A MRAM includes a reference circuit comprising at least one magnetic storage cell, wherein each magnetic storage cell in the MRAM is programmed to the same state. The reference circuit includes a load element coupled to the magnetic storage cell, wherein the load element is configured to establish a reference voltage during a read operation.