Flash memory using virtual physical addresses

Abstract

A system and method for using virtual physical addresses in a non-volatile memory device are disclosed. The physical layout of the non-volatile memory device may have physical die that are not a power-of-2 in number. In order to advantageously use the power-of-2 die number, which enables using a power-of-2 die interleave, a virtual physical addressing scheme is used. In particular, the virtual physical addressing scheme includes virtual die and virtual blocks, wherein the virtual die are a power-of-2 in number. Further, a conversion between the virtual physical addressing scheme and the actual physical addressing scheme is provided. In this way, for certain operations of the memory device, the virtual addressing scheme is used. For other operations, such as reading from, writing to or erasing, the actual physical addressing scheme is used.