The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 26, 2016
Filed:
Dec. 29, 2008
Shih-yuan Wang, Palo Alto, CA (US);
Alexandre M. Bratkovski, Mountain View, CA (US);
R. Stanley Williams, Portola Valley, CA (US);
Jingjing LI, Sunnyvale, CA (US);
Wei Wu, Palo Alto, CA (US);
Philip J. Kuekes, Menlo Park, CA (US);
Shih-Yuan Wang, Palo Alto, CA (US);
Alexandre M. Bratkovski, Mountain View, CA (US);
R. Stanley Williams, Portola Valley, CA (US);
Jingjing Li, Sunnyvale, CA (US);
Wei Wu, Palo Alto, CA (US);
Philip J. Kuekes, Menlo Park, CA (US);
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Abstract
A negative index material (or metamaterial) crossbar includes a first layer of approximately parallel nanowires and a second layer of approximately parallel nanowires that overlay the nanowires in the first layer. The nanowires in the first layer are approximately perpendicular in orientation to the nanowires in the second layer. Each nanowire of the first layer and each nanowire of the second layer has substantially regularly spaced fingers. The crossbar further includes resonant elements at nanowire intersections between the respective layers. Each resonant element includes two fingers of a nanowire in the first layer and two fingers of a nanowire in the second layer.