The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 26, 2016

Filed:

Mar. 25, 2014
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Zhong-Xiang He, Essex Junction, VT (US);

Qizhi Liu, Lexington, MA (US);

Ronald G. Meunier, Westford, VT (US);

Steven M. Shank, Jericho, VT (US);

Assignee:

GLOBALFOUNDRIES INC., Grand Cayman, KY;

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G02B 6/42 (2006.01); G02B 6/122 (2006.01); G02B 6/136 (2006.01); G02B 6/132 (2006.01);
U.S. Cl.
CPC ...
G02B 6/42 (2013.01); G02B 6/122 (2013.01); G02B 6/132 (2013.01); G02B 6/136 (2013.01);
Abstract

Disclosed are structures with an optical waveguide having a first segment at a first level and a second segment extending between the first level and a higher second level and further extending along the second level. Specifically, the waveguide comprises a first segment between first and second dielectric layers. The second dielectric layer has a trench, which extends through to the first dielectric layer and which has one side positioned laterally adjacent to an end of the first segment. The waveguide also comprises a second segment extending from the bottom of the trench on the side adjacent to the first segment up to and along the top surface of the second dielectric layer on the opposite side of the trench. A third dielectric layer covers the second segment in the trench and on the top surface of the second dielectric layer. Also disclosed are methods of forming such optoelectronic structures.


Find Patent Forward Citations

Loading…