The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 26, 2016

Filed:

Jul. 24, 2013
Applicant:

University of Southampton, Southampton, GB;

Inventors:

Gillian Reid, Southampton, GB;

Philip Nigel Bartlett, Southampton, GB;

Andrew Lee Hector, Southampton, GB;

Assignee:

University of Southampton, Southampton, GB;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C25D 3/00 (2006.01); C25D 3/02 (2006.01); C25D 7/12 (2006.01); H01L 45/00 (2006.01); C25D 5/02 (2006.01); C25D 3/34 (2006.01); C25D 3/32 (2006.01); C25D 3/30 (2006.01); C25D 3/26 (2006.01); C25D 3/36 (2006.01); C25D 3/60 (2006.01); H01L 21/02 (2006.01); C25D 3/44 (2006.01); C25D 3/54 (2006.01); C25D 3/56 (2006.01); C25D 5/18 (2006.01); C25D 9/08 (2006.01);
U.S. Cl.
CPC ...
C25D 7/12 (2013.01); C25D 3/02 (2013.01); C25D 3/26 (2013.01); C25D 3/30 (2013.01); C25D 3/32 (2013.01); C25D 3/34 (2013.01); C25D 3/36 (2013.01); C25D 3/44 (2013.01); C25D 3/54 (2013.01); C25D 3/56 (2013.01); C25D 3/60 (2013.01); C25D 5/02 (2013.01); C25D 5/18 (2013.01); C25D 9/08 (2013.01); H01L 21/02381 (2013.01); H01L 21/02491 (2013.01); H01L 21/02549 (2013.01); H01L 21/02628 (2013.01); H01L 45/06 (2013.01); H01L 45/1253 (2013.01); H01L 45/144 (2013.01); H01L 45/1608 (2013.01); H01L 45/1683 (2013.01);
Abstract

A process for the electrochemical deposition of a semiconductor material, which process comprises: (i) providing a non-aqueous solvent; (ii) providing at least one precursor salt which forms a source of the constituent elements within the semiconductor material to be deposited; and (iii) electrodepositing the semiconductor material onto an electrode substrate using the precursor salt in the non-aqueous solvent, characterized in that: (iv) the semiconductor material is a p-block or a post-transition metal semiconductor material containing at least one p-block element or post-transition metal; and (v) the non-aqueous solvent is a halocarbon non-aqueous solvent.


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