The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 19, 2016

Filed:

Feb. 22, 2013
Applicant:

Kabushiki Kaisha Toshiba, Minato-ku, Tokyo, JP;

Inventors:

Kenji Essaki, Kanagawa, JP;

Takayuki Fukasawa, Kanagawa, JP;

Tomokazu Morita, Chiba, JP;

Noikazu Osada, Tokyo, JP;

Yasuyuki Hotta, Tokyo, JP;

Takashi Kuboki, Tokyo, JP;

Toshiro Hiraoka, Kanagawa, JP;

Assignee:

Kabushiki Kaisha Toshiba, Minato-ku, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01M 4/58 (2010.01); H01M 4/134 (2010.01); H01M 4/133 (2010.01); H01M 4/36 (2006.01); H01M 4/62 (2006.01); H01M 4/04 (2006.01); H01M 4/02 (2006.01);
U.S. Cl.
CPC ...
H01M 4/134 (2013.01); H01M 4/133 (2013.01); H01M 4/366 (2013.01); H01M 4/625 (2013.01); H01M 4/0471 (2013.01); H01M 2004/021 (2013.01); Y02E 60/122 (2013.01);
Abstract

There is provided a negative electrode material for non-aqueous electrolyte secondary batteries, the negative electrode material being a silicon oxide represented by the composition formula, SiO, containing silicon and silicon oxide, in which x satisfies the relation of 0.1≦x≦0.8; the silicon oxide contains crystalline silicon; among the particles of crystalline silicon having a diameter of 1 nm or greater, the proportion by number of particles having a diameter of 100 nm or less is 90% or greater; and the BET specific surface area of the silicon oxide is larger than 100 m/g.


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