The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 19, 2016
Filed:
May. 20, 2015
Applicants:
Dongjun Seong, Seongnam-si, KR;
Yoocheol Shin, Hwaseong-si, KR;
Inventors:
Dongjun Seong, Seongnam-si, KR;
Yoocheol Shin, Hwaseong-si, KR;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 45/00 (2006.01); H01L 21/62 (2006.01); H01L 27/24 (2006.01);
U.S. Cl.
CPC ...
H01L 45/1675 (2013.01); H01L 27/249 (2013.01); H01L 45/08 (2013.01); H01L 45/12 (2013.01); H01L 45/1226 (2013.01); H01L 45/146 (2013.01); H01L 45/1608 (2013.01); H01L 45/1683 (2013.01); H01L 27/2436 (2013.01);
Abstract
Variable resistance memory devices and methods of forming the same are disclosed. The devices may include an additional barrier layer that is a portion of a variable resistance layer and that is formed before forming a horizontal electrode layer. Due to the presence of the additional barrier layer, it may be possible to cure loss or damage of the variable resistance layer.