Light-emitting diode and light-emitting diode lamp

Abstract

The present invention relates to a light-emitting diode which has an emission wavelength of 655 nm or more, excellent monochromatic properties, high output, high luminance, high efficiency and fast response time, has such a characteristic that the intensity of light emitted from a light extraction surface and traveling in a direction perpendicular to the light extraction surface has high directivity, and can release heat to the outside with high efficiency; and a light-emitting diode lamp. The light-emitting diode includes a compound semiconductor layer () which includes at least a pn-junction-type light-emitting section () and a strain adjustment layer () laminated on the light-emitting section (); wherein the light-emitting section () has a laminated structure composed of a strained light-emitting layer having a composition formula (AlGa)InP (0≦X≦0.1, 0.37≦Y≦0.46) and a barrier layer, wherein the strain adjustment layer () can be penetrated by light from the light-emitting section () and has a smaller lattice constant than those of the strained light-emitting layer and the barrier layer; and wherein a functional substrate () is bonded to a surface () of the compound semiconductor layer () which is located on the opposite side with respect to the light extraction surface () through a reflective structure ().