The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 19, 2016
Filed:
Mar. 01, 2011
Kumi Masunaga, Kanagawa-ken, JP;
Ryota Kitagawa, Tokyo, JP;
Eishi Tsutsumi, Kanagawa-ken, JP;
Akira Fujimoto, Kanagawa-ken, JP;
Koji Asakawa, Kanagawa-ken, JP;
Takanobu Kamakura, Kanagawa-ken, JP;
Shinji Nunotani, Tokyo, JP;
Kumi Masunaga, Kanagawa-ken, JP;
Ryota Kitagawa, Tokyo, JP;
Eishi Tsutsumi, Kanagawa-ken, JP;
Akira Fujimoto, Kanagawa-ken, JP;
Koji Asakawa, Kanagawa-ken, JP;
Takanobu Kamakura, Kanagawa-ken, JP;
Shinji Nunotani, Tokyo, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A semiconductor light emitting device includes a first semiconductor layer of a first conductivity type, a first electrode layer, a light emitting layer, a second semiconductor layer, a third semiconductor layer and a second electrode layer. The first electrode layer includes a metal portion having a plurality of opening portions. The opening portions penetrate the metal portion and have an equivalent circle diameter of a shape of the opening portions. The light emitting layer is between the first semiconductor layer and the first electrode layer. The second semiconductor layer of a second conductivity type is between the light emitting layer and the first electrode layer. The third semiconductor layer of a second conductivity type is between the second semiconductor layer and the first electrode layer. The second electrode layer is connected to the first semiconductor layer.