The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 19, 2016
Filed:
Aug. 23, 2013
Applicant:
Panasonic Corporation, Osaka, JP;
Inventors:
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/00 (2010.01); H01L 33/32 (2010.01); H01L 33/16 (2010.01); H05B 33/08 (2006.01); H01L 33/02 (2010.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 33/32 (2013.01); H01L 33/0058 (2013.01); H01L 33/16 (2013.01); H05B 33/0803 (2013.01); H01L 21/0251 (2013.01); H01L 21/0254 (2013.01); H01L 21/0262 (2013.01); H01L 21/02458 (2013.01); H01L 21/02609 (2013.01); H01L 33/025 (2013.01);
Abstract
A nitride semiconductor light emitting element includes a light emitting layer. The light emitting layer includes an InGaN well layer (0<x≦1) having a principal surface that is an m-plane. A profile in a depth direction (depth profile) of an In composition ratio x in the InGaN well layer has a plurality of peaks. Values of the In composition ratios x at the respective plurality of peaks are different from one another.
Inoue, Akira. (2016). Nitride semiconductor light emitting element having light emitting layer including inxga1-xn well layer and led system (U.S. Patent No. 9318659). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9318659
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile