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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9318656 B1

PDFFull Text
Date of Patent:
Apr. 19, 2016

Filed:

Dec. 13, 2012

Light-emitting diode and method of manufacturing the same

Applicant:

Showa Denko K.k., Minato-ku, Tokyo, JP;

Inventor:

Noriyuki Aihara, Chichibu, JP;

Assignee:

SHOWA DENKO K.K., Tokyo, JP;

Attorney:

Sughrue Mion, PLLC

Primary Examiner:

Sonya D McCall Shepard

Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 31/00 (2006.01); H01L 33/24 (2010.01); H01L 33/20 (2010.01); H01L 33/38 (2010.01); H01L 33/44 (2010.01); H01L 33/00 (2010.01); H01L 33/06 (2010.01); H01L 33/10 (2010.01); H01L 33/42 (2010.01); H01L 33/40 (2010.01); H01L 33/30 (2010.01);
U.S. Cl.
CPC ...
H01L 33/24 (2013.01); H01L 33/005 (2013.01); H01L 33/0079 (2013.01); H01L 33/06 (2013.01); H01L 33/10 (2013.01); H01L 33/20 (2013.01); H01L 33/38 (2013.01); H01L 33/405 (2013.01); H01L 33/42 (2013.01); H01L 33/44 (2013.01); H01L 33/0062 (2013.01); H01L 33/30 (2013.01); H01L 33/385 (2013.01); H01L 2933/0016 (2013.01); H01L 2933/0025 (2013.01); H01L 2933/0058 (2013.01);
Abstract

A light-emitting diode and manufacturing method, including a flat portion and a mesa structure. An inclined side surface is formed by wet etching such that a cross-sectional area of the mesa structure is continuously reduced toward a top surface. A protective film covers the flat portion, the inclined side surface, and a peripheral region of the top surface of the mesa structure. The protective film includes an electrical conduction window arranged around a light emission hole and from which a compound semiconductor layer is exposed. A continuous electrode film contacts the exposed compound semiconductor layer, covers the protective film formed on the flat portion, and has the light emission hole on the top surface. A transparent conductive film is formed between a reflecting layer and the layer at a position that corresponds to the electrical conduction window and in a range surrounded by the electrical conduction window.

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