The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 19, 2016

Filed:

Oct. 08, 2012
Applicant:

Osram Opto Semiconductors Gmbh, Regensburg, DE;

Inventors:

Adrian Stefan Avramescu, Regensburg, DE;

Patrick Rode, Regensburg, DE;

Martin Strassburg, Donaustauf, DE;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/18 (2006.01); H01L 33/06 (2010.01); H01L 33/30 (2010.01); H01L 33/62 (2010.01); H01L 27/15 (2006.01); H01L 33/08 (2010.01); H01L 33/38 (2010.01); H01L 33/00 (2010.01);
U.S. Cl.
CPC ...
H01L 33/06 (2013.01); H01L 27/15 (2013.01); H01L 33/005 (2013.01); H01L 33/08 (2013.01); H01L 33/382 (2013.01); H01L 2224/48463 (2013.01);
Abstract

A semiconductor chip with a layer stack includes a first semiconductor layer sequence and a second semiconductor layer sequence. The first semiconductor layer sequence includes a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type and an active zone arranged therebetween. The second semiconductor layer sequence includes the second semiconductor region of the second conductivity type, a third semiconductor region of the first conductivity type and a second active zone arranged therebetween.


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