The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 19, 2016
Filed:
Sep. 18, 2014
Samsung Electronics Co., Ltd., Suwon-Si, Gyeonggi-do, KR;
Bum Joon Kim, Seoul, KR;
Seung Woo Choi, Seoul, KR;
Sung Tae Kim, Seoul, KR;
Young Min Park, Hwaseong-si, KR;
Eun Deok Sim, Yongin-si, KR;
Sung Pyo Lee, Hwaseong-si, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-Si, Gyeonggi-Do, KR;
Abstract
A method of manufacturing a semiconductor light emitting device includes forming a light emitting structure layer including an active layer on a first substrate. A second substrate is bonded to the light emitting structure layer at a first temperature higher than room temperature. The first substrate is removed from the light emitting structure layer at a second temperature higher than room temperature. The second substrate and the light emitting structure are cooled to reach room temperature. A coefficient of thermal expansion of the second substrate is different from a coefficient of thermal expansion of the active layer.