The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 19, 2016
Filed:
May. 29, 2012
Applicants:
Mehrdad M. Moslehi, Los Altos, CA (US);
Virendra V. Rana, Los Gatos, CA (US);
Pawan Kapur, Burlingame, CA (US);
Inventors:
Mehrdad M. Moslehi, Los Altos, CA (US);
Virendra V. Rana, Los Gatos, CA (US);
Pawan Kapur, Burlingame, CA (US);
Assignee:
Solexel, Inc., Milpitas, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/18 (2006.01); H01L 21/265 (2006.01); H01L 31/0352 (2006.01); H01L 31/068 (2012.01); H01L 31/0224 (2006.01);
U.S. Cl.
CPC ...
H01L 31/1864 (2013.01); H01L 21/26586 (2013.01); H01L 31/022441 (2013.01); H01L 31/03529 (2013.01); H01L 31/035281 (2013.01); H01L 31/068 (2013.01); H01L 31/0682 (2013.01); H01L 31/1804 (2013.01); H01L 31/1896 (2013.01); Y02E 10/547 (2013.01); Y02P 70/521 (2015.11);
Abstract
A back contact back junction thin-film solar cell is formed on a thin-film semiconductor solar cell. Preferably the thin film semiconductor material comprises crystalline silicon. Base regions, emitter regions, and front surface field regions are formed through ion implantation and annealing processes.