The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 19, 2016
Filed:
Sep. 16, 2014
Finisar Corporation, Sunnyvale, CA (US);
James A. Tatum, Plano, TX (US);
James R. Biard, Richardson, TX (US);
FINISAR CORPORATION, Sunnyvale, CA (US);
Abstract
An avalanche photodiode can include: an avalanche region having one or more layers prepared from GaAs; an Nabsorption layer extending across the avalanche region; an N-type layer above at least a center portion of the Nabsorption layer; and optionally a lower conductivity layer laterally from the N-type layer to a surface of the avalanche region and above a perimeter portion of the Nabsorption layer, the lower conductivity layer having lower conductivity compared to the N-type layer. The avalanche photodiode can include a window layer above the N-type layer and lower conductivity layer, and an anode contact above the window layer. The avalanche photodiode can include an Nbarrier layer below the Nabsorption layer, an Nconduction layer below the Nbarrier layer, a substrate below the Nconduction layer, and a cathode contact coupled with the Nconduction layer.