The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9318629 B1

PDF
Full Text
Expired
Date of Patent:
Apr. 19, 2016

Filed:

Nov. 23, 2012
Applicant:

Beijing Boe Optoelectronics Technology Co., Ltd., Beijing, CN;

Inventors:

Shaoying Xu, Beijing, CN;

Zhenyu Xie, Beijing, CN;

Xu Chen, Beijing, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/18 (2006.01); H01L 31/0352 (2006.01); H01L 27/146 (2006.01); H01L 23/48 (2006.01); H01L 31/0232 (2014.01);
U.S. Cl.
CPC ...
H01L 31/0352 (2013.01); H01L 23/481 (2013.01); H01L 27/1461 (2013.01); H01L 27/14692 (2013.01); H01L 31/02325 (2013.01); H01L 31/18 (2013.01); H01L 2924/0002 (2013.01);
Abstract

Embodiments of the invention disclose a sensor and its fabrication method, the sensor comprises: a base substrate, a group of gate lines and a group of data lines arranged as crossing each other, a plurality of sensing elements arranged in an array and defined by the group of gate lines and the group of data lines, each sensing element comprising a TFT device and a photodiode sensing device, wherein the TFT device is a bottom gate TFT; the photodiode sensing device comprises: a receiving electrode connected with a source electrode, a photodiode disposed on the receiving electrode, a transparent electrode disposed on the photodiode, and a bias line disposed on and connected with the transparent electrode, the bias line is disposed as parallel to the gate line.


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