The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 19, 2016
Filed:
May. 09, 2014
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Jae-Woo Seo, Seoul, KR;
Gun-Ok Jung, Yongin-si, KR;
Min-Su Kim, Hwaseong-si, KR;
Sang-Shin Han, Suwon-si, KR;
Ju-Hyun Kang, Hwaseong-si, KR;
Uk-Rae Cho, Suwon-si, KR;
SAMSUNG ELECTRONICS CO., LTD., Gyeonggi-do, KR;
Abstract
Provided are a semiconductor device and a method of fabricating the semiconductor device. The semiconductor device includes a first source electrode configured to connect a first power rail to a first impurity region, the first power rail coupled to a first voltage source, a second source electrode configured to connect a second power rail to a second impurity region, the second power rail coupled to a second voltage source, the first and second voltage sources being different, a gate electrode on the first and second impurity regions, a first drain electrode on the first impurity region, a second drain electrode on the second impurity region and an interconnection line connected to the first drain electrode and the second drain electrode, the interconnection line forming at least one closed loop.