The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 19, 2016
Filed:
Jun. 10, 2014
Vanguard International Semiconductor Corporation, Hsinchu, TW;
Manoj Kumar, Dhanbad, IN;
Pei-Heng Hung, New Taipei, TW;
Priyono Tri Sulistyanto, Yogyakarta, ID;
Chia-Hao Lee, New Taipei, TW;
Chih-Cherng Liao, Jhudong Township, TW;
Shang-Hui Tu, Jhubei, TW;
Vanguard International Semiconductor Corporation, Hsinchu, TW;
Abstract
A semiconductor device includes a semiconductor substrate and a semiconductor layer formed thereover. A gate structure is disposed over the semiconductor layer, and a first doped region is disposed in the semiconductor layer adjacent to a first side of the gate structure. A second doped region is disposed in the semiconductor layer adjacent to a second side of the gate structure opposite to the first side. A third doped region is disposed in the first doped region. A fourth doped region is disposed in the second doped region. A plurality of fifth doped regions is disposed in the second doped region. A sixth doped region is disposed in the semiconductor layer under the first doped region. A conductive contact is formed in the third doped region and the first doped region.