The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 19, 2016
Filed:
Jan. 31, 2014
Panasonic Intellectual Property Management Co., Ltd., Osaka, JP;
Chiaki Kudou, Toyama, JP;
Abstract
This silicon carbide semiconductor device includes: a substrate with a principal surface; a silicon carbide layer which is arranged on a side of the principal surface of the substrate and which includes a first impurity region of a first conductivity type; a trench which is arranged in the silicon carbide layer and which has a bottom located in the first impurity region; a trench bottom impurity layer which is arranged in the trench to contact with at least a portion of the bottom of the trench and which is a silicon carbide epitaxial layer of a second conductivity type; a gate insulating film which covers a side surface of the trench and the trench bottom impurity layer; and a gate electrode which is arranged over at least a portion of the gate insulating film that is located inside the trench.