The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 19, 2016
Filed:
Mar. 12, 2014
Applicant:
Acreo Swedish Ict Ab, Kista, SE;
Inventors:
Assignee:
ACREO SWEDISH ICT AB, Kista, SE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/76 (2006.01); H01L 29/94 (2006.01); H01L 31/062 (2012.01); H01L 31/113 (2006.01); H01L 31/119 (2006.01); H01L 21/00 (2006.01); H01L 29/78 (2006.01); H01L 51/05 (2006.01); H01L 29/66 (2006.01); H01L 51/00 (2006.01);
U.S. Cl.
CPC ...
H01L 29/78 (2013.01); H01L 29/66477 (2013.01); H01L 51/052 (2013.01); H01L 51/0529 (2013.01); H01L 51/0003 (2013.01);
Abstract
A ferroelectric field-effect transistor device includes: a semiconductor layer; a ferroelectric layer; and an ion conductor layer arranged between the semiconductor layer and the ferroelectric layer and in contact with the semiconductor layer. Methods for producing the ferroelectric field-effect transistor device and using the ferroelectric field-effect transistor device in non-volatile memory devices that reduce a readout voltage to a voltage as low as 0.2 V are also disclosed.