The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 19, 2016
Filed:
Mar. 22, 2012
Applicants:
Andre Geim, Manchester, GB;
Konstantin Novoselov, Manchester, GB;
Roman Gorbachev, Manchester, GB;
Leonid Ponomarenko, Manchester, GB;
Liam Britnell, Manchester, GB;
Inventors:
Andre Geim, Manchester, GB;
Konstantin Novoselov, Manchester, GB;
Roman Gorbachev, Manchester, GB;
Leonid Ponomarenko, Manchester, GB;
Liam Britnell, Manchester, GB;
Assignee:
The University of Manchester, Manchester, GB;
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/16 (2006.01); H01L 29/775 (2006.01); H01L 29/20 (2006.01); H01L 29/267 (2006.01); H01L 29/417 (2006.01); H01L 29/51 (2006.01); H01L 21/02 (2006.01); H01L 29/06 (2006.01); H01L 29/778 (2006.01);
U.S. Cl.
CPC ...
H01L 29/775 (2013.01); H01L 21/02104 (2013.01); H01L 29/06 (2013.01); H01L 29/1606 (2013.01); H01L 29/2003 (2013.01); H01L 29/267 (2013.01); H01L 29/41725 (2013.01); H01L 29/51 (2013.01); H01L 29/778 (2013.01);
Abstract
This application relates to graphene based heterostructures and transistor devices comprising graphene. The hetero-structures comprise i) a first graphene layer; ii) a spacer layer and iii) a third graphene. The transistors comprise (i) an electrode, the electrode comprising a graphene layer, and (ii) an insulating barrier layer.