The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 19, 2016

Filed:

Aug. 29, 2014
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Inventors:

Sang-Il Han, Seoul, KR;

Jong-Un Kim, Hwaseong-si, KR;

Jun-Soo Kim, Seoul, KR;

Assignee:

SAMSUNG ELECTRONICS CO., LTD., Suwon-si, Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/00 (2006.01); H01L 29/00 (2006.01); H01L 29/423 (2006.01); H01L 29/78 (2006.01); H01L 29/66 (2006.01); H01L 27/108 (2006.01);
U.S. Cl.
CPC ...
H01L 29/4236 (2013.01); H01L 27/10814 (2013.01); H01L 27/10876 (2013.01); H01L 27/10888 (2013.01); H01L 29/66621 (2013.01); H01L 29/78 (2013.01); H01L 29/7827 (2013.01);
Abstract

Provided is a semiconductor device, including a substrate including a device isolation layer and an active region isolated by the device isolation layer; a trench in the active region; a gate electrode filling at least a portion of the trench; a recess in the substrate at one side of the gate electrode, the recess overlapping a portion of the device isolation layer and the active region; and a lower contact plug filling the recess.


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