The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 19, 2016

Filed:

Jun. 26, 2012
Applicant:

Tsuyoshi Takahashi, Ebina, JP;

Inventor:

Tsuyoshi Takahashi, Ebina, JP;

Assignee:

FUJITSU LIMITED, Kawasaki, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/06 (2012.01); H01L 29/267 (2006.01); H01L 29/66 (2006.01); H01L 29/88 (2006.01);
U.S. Cl.
CPC ...
H01L 29/267 (2013.01); H01L 29/66219 (2013.01); H01L 29/882 (2013.01);
Abstract

A semiconductor apparatus includes: a semiconductor apparatus includes: a first semiconductor layer of a first conductivity type; a second semiconductor layer of a second conductivity type; and a third semiconductor layer of the first conductivity type, wherein: the second semiconductor layer is formed between the first and third semiconductor layers, and the first and second semiconductor layers are in contact with each other; and a first energy level at a bottom edge of a conduction band of the first semiconductor layer is lower than a second energy level at a top edge of a valence band of the second semiconductor layer, and the second energy level at the top edge of the valence band of the second semiconductor layer is substantially the same as a third energy level at a bottom edge of a conduction band of the third semiconductor layer.


Find Patent Forward Citations

Loading…