The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 19, 2016
Filed:
Jul. 10, 2014
Samsung Electronics Co., Ltd., Suwon-Si, Gyeonggi-Do, KR;
Jin-hong Park, Suwon-si, KR;
Jae-woo Shim, Suwon-si, KR;
Hyung-youl Park, Suwon-si, KR;
Jae-ho Lee, Seoul, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Research & Business Foundation Sungkyunkwan University, Gyeonggi-do, KR;
Abstract
Provided are graphene transistors having a tunable barrier. The graphene transistor includes a semiconductor substrate, an insulating thin film disposed on the semiconductor substrate, a graphene layer on the insulating thin film, a first electrode connected to an end of the graphene layer, a second electrode that is separate from an other end of the graphene layer and contacts the semiconductor substrate, a gate insulating layer covering the graphene layer, and a gate electrode on the gate insulating layer, wherein an energy barrier is formed between the semiconductor substrate and the graphene layer.