The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 19, 2016
Filed:
Feb. 18, 2013
Infineon Technologies Austria Ag, Villach, AT;
Infineon Technologies Austria AG, Villach, AT;
Abstract
A super junction semiconductor device includes a semiconductor portion with parallel first and second surfaces. An impurity layer of a first conductivity type is formed in the semiconductor portion. Between the first surface and the impurity layer a super junction structure includes first columns of the first conductivity type and second columns of a second conductivity type. A sign of a compensation rate between the first and second columns may change along a vertical extension of the columns perpendicular to the first surface. A body zone of the second conductivity type is formed between the first surface and one of the second columns. A field extension zone of the second conductivity type may be electrically connected to the body zone or a field extension zone of the first conductivity type may be connected to the impurity layer. The field extension zone improves the avalanche characteristics of the semiconductor device.