The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 19, 2016

Filed:

Mar. 10, 2015
Applicant:

Kabushiki Kaisha Toshiba, Minato-ku, Tokyo, JP;

Inventors:

Yasunori Iwatsu, Chigasaki Kanagawa, JP;

Masahiro Inohara, Fujisawa, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/74 (2006.01); H01L 29/06 (2006.01); H01L 29/739 (2006.01); H01L 29/10 (2006.01); H01L 29/423 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0623 (2013.01); H01L 29/1095 (2013.01); H01L 29/42324 (2013.01); H01L 29/7393 (2013.01);
Abstract

A semiconductor device includes a semiconductor substrate, a semiconductor layer, a first electrode, and a first insulating film. The semiconductor layer is provided on the semiconductor substrate. The semiconductor layer includes first-fifth regions. The first region includes a first portion and a second portion arranged with the first portion. The second region is provided in a surface of the first portion. The third region is provided between the second portion and the second region in the surface of the first portion. The fourth region is provided between the second portion and the third region in the surface of the first portion. The fifth region is provided in a surface of the fourth region. The first electrode is provided between the fifth region and the second portion on the semiconductor layer. The first insulating film is provided between the semiconductor layer and the first electrode.


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