The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 19, 2016
Filed:
Jun. 19, 2015
Fuji Electric Co., Ltd., Kanagawa, JP;
Naoki Kumagai, Nagano, JP;
FUJI ELECTRIC CO., LTD., Kanagawa, JP;
Abstract
A wide bandgap insulated gate semiconductor device includes a semiconductor substrate made of semiconductor having a bandgap wider than silicon; ndrift layer over the semiconductor substrate; p-channel regions selectively disposed over the drift layer; nsemiconductor regions selectively disposed in respective surfaces in the channel regions; a plurality of pbase regions in contact with bottoms of the respective channel regions; a protruding drift layer portion that is n-type region interposed between the p-channel regions and the pbase regions thereunder; a gate electrode formed, through a gate insulating film, on the protruding drift layer portion and on respective surfaces of the p-channel regions; a source electrode in contact with the nsemiconductor regions in the channel regions; and a pfloating region inside the protruding drift layer portion, having side faces respectively facing side faces of the second conductivity type base regions, wherein respective gaps between the pbase regions and the pfloating region defined by the respective side faces have a wide portion and a narrow portion.