The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 19, 2016

Filed:

May. 06, 2013
Applicant:

Commissariat a L'energie Atomique ET Aux Ene Alt, Paris, FR;

Inventors:

Stephanie Huet, Grenoble, FR;

Abdenacer Ait-Mani, Saint Egreve, FR;

Lea Di Cioccio, Saint Ismier, FR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/146 (2006.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1469 (2013.01); H01L 24/03 (2013.01); H01L 24/19 (2013.01); H01L 24/80 (2013.01); H01L 27/1465 (2013.01); H01L 27/14687 (2013.01); H01L 27/14692 (2013.01); H01L 24/05 (2013.01); H01L 24/08 (2013.01); H01L 27/14632 (2013.01); H01L 27/14636 (2013.01); H01L 2224/03845 (2013.01); H01L 2224/04105 (2013.01); H01L 2224/05571 (2013.01); H01L 2224/05647 (2013.01); H01L 2224/08147 (2013.01); H01L 2224/19 (2013.01); H01L 2224/221 (2013.01); H01L 2224/80201 (2013.01); H01L 2224/80357 (2013.01); H01L 2224/80895 (2013.01); H01L 2224/80896 (2013.01); H01L 2224/80948 (2013.01); H01L 2224/96 (2013.01); H01L 2924/00014 (2013.01); H01L 2924/12036 (2013.01); H01L 2924/12043 (2013.01);
Abstract

A method for producing at least one photosensitive infrared detector by assembling a first electronic component including plural photodiodes sensitive to infrared radiation and a second electronic component including at least one electronic circuit for reading the plurality of photodiodes, an infrared detector, and an assembly for producing such a detector, the method including: production, on each one of the first and second components, of a connection face formed at least partially by a silicon oxide (SiO2)-based layer; bonding the first component and the second component by the connection faces thereof, thus performing the direct bonding of the two components. The method can simplify hybridization of heterogeneous components for producing an infrared detector.


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