The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 19, 2016

Filed:

Sep. 08, 2015
Applicant:

Allegro Microsystems, Llc, Worcester, MA (US);

Inventors:

Zhixin Wang, Austin, TX (US);

Juin Jei Liou, Oviedo, FL (US);

Wei Liang, Orlando, FL (US);

Richard B. Cooper, Shrewsbury, MA (US);

Maxim Klebanov, Newton, MA (US);

Harianto Wong, Southborough, MA (US);

Assignee:

Allegro Microsystems, LLC, Worcester, MA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 27/02 (2006.01); H01L 29/868 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0262 (2013.01); H01L 27/0255 (2013.01); H01L 29/868 (2013.01);
Abstract

In one aspect, a silicon-controller rectifier (SCR) includes a first N+ region; a first P+ region; a second N+ region; a second P+ region; and a P+/Intrinsic/N+ (PIN) diode disposed between the first P+ region and the second N+ region. The PIN diode includes a third N+ region, a third P+ region and an intrinsic material disposed between the third N+ region and the third P+ region. An anode terminal of the SCR connects to the first N+ region and the first P+ region and a cathode terminal of the SCR connects to the second N+ region and the second P+ region. A first distance between the third N+ region and the third P+ region controls the trigger voltage of the SCR and a second distance corresponding to a length of each of the third P+ region and the third N+ region controls the holding voltage of the SCR.


Find Patent Forward Citations

Loading…