logo

For the Inventor, By the Inventor

The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9318476 B1

PDFFull Text
Date of Patent:
Apr. 19, 2016

Filed:

Mar. 03, 2014

High performance standard cell with continuous oxide definition and characterized leakage current

Applicant:

Qualcomm Incorporated, San Diego, CA (US);

Inventors:

Xiangdong Chen, Irvine, CA (US);

Ohsang Kwon, San Diego, CA (US);

Foua Vang, Lemon Grove, CA (US);

Animesh Datta, San Diego, CA (US);

Seid Hadi Rasouli, San Diego, CA (US);

Assignee:

QUALCOMM Incorporated, San Diego, CA (US);

Attorney:

Haynes and Boone, LLP

Primary Examiner:

Michael Jung

Int. Cl.
CPC ...
H01L 27/02 (2006.01); H01L 27/088 (2006.01); H01L 21/768 (2006.01); H01L 21/8234 (2006.01); H01L 27/118 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0207 (2013.01); H01L 21/76895 (2013.01); H01L 21/823437 (2013.01); H01L 21/823475 (2013.01); H01L 27/088 (2013.01); H01L 27/11807 (2013.01); H01L 21/823412 (2013.01); H01L 21/823481 (2013.01); H01L 2027/11831 (2013.01); H01L 2027/11861 (2013.01); H01L 2027/11866 (2013.01);
Abstract

A transistor cell is provided that includes a dummy gate overlaying a continuous oxide definition (OD) region. A first portion of the OD region adjacent a first side of the dummy forms the drain. The cell includes a local interconnect structure that couples the dummy gate and a portion of the OD region adjacent a second opposing side of the dummy gate to a source voltage.

Find Patent Forward Citations

Quick Actions:

Chen, Xiangdong. (2016). High performance standard cell with continuous oxide definition and characterized leakage current (U.S. Patent No. 9318476). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9318476

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Loading…