The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 19, 2016

Filed:

May. 19, 2015
Applicant:

Tessera Advanced Technologies, Inc., San Jose, CA (US);

Inventors:

Michihiro Kawashita, Hitachinaka, JP;

Yasuhiro Yoshimura, Kasumigaura, JP;

Naotaka Tanaka, Kasumigaura, JP;

Takahiro Naito, Duesseldorf, DE;

Takashi Akazawa, Musashimurayama, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 23/48 (2006.01); H01L 21/683 (2006.01); H01L 21/768 (2006.01); H01L 23/00 (2006.01); H01L 25/065 (2006.01); H01L 25/00 (2006.01); H01L 23/538 (2006.01); H01L 23/522 (2006.01); H01L 23/528 (2006.01); H01L 25/07 (2006.01);
U.S. Cl.
CPC ...
H01L 23/481 (2013.01); H01L 21/6835 (2013.01); H01L 21/76898 (2013.01); H01L 23/528 (2013.01); H01L 23/5226 (2013.01); H01L 23/5386 (2013.01); H01L 24/11 (2013.01); H01L 24/12 (2013.01); H01L 24/13 (2013.01); H01L 24/16 (2013.01); H01L 24/27 (2013.01); H01L 24/94 (2013.01); H01L 25/0657 (2013.01); H01L 25/074 (2013.01); H01L 25/50 (2013.01); H01L 24/81 (2013.01); H01L 2221/68372 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/0557 (2013.01); H01L 2224/05572 (2013.01); H01L 2224/1147 (2013.01); H01L 2224/11472 (2013.01); H01L 2224/13009 (2013.01); H01L 2224/13013 (2013.01); H01L 2224/13014 (2013.01); H01L 2224/13021 (2013.01); H01L 2224/13022 (2013.01); H01L 2224/13025 (2013.01); H01L 2224/13099 (2013.01); H01L 2224/274 (2013.01); H01L 2224/81136 (2013.01); H01L 2224/81345 (2013.01); H01L 2224/81365 (2013.01); H01L 2224/81801 (2013.01); H01L 2225/06513 (2013.01); H01L 2225/06517 (2013.01); H01L 2225/06541 (2013.01); H01L 2924/0002 (2013.01); H01L 2924/00014 (2013.01); H01L 2924/01002 (2013.01); H01L 2924/014 (2013.01); H01L 2924/01005 (2013.01); H01L 2924/01006 (2013.01); H01L 2924/01013 (2013.01); H01L 2924/01018 (2013.01); H01L 2924/01022 (2013.01); H01L 2924/01024 (2013.01); H01L 2924/01028 (2013.01); H01L 2924/01029 (2013.01); H01L 2924/01033 (2013.01); H01L 2924/01074 (2013.01); H01L 2924/01078 (2013.01); H01L 2924/01079 (2013.01); H01L 2924/10253 (2013.01); H01L 2924/1205 (2013.01); H01L 2924/1306 (2013.01); H01L 2924/14 (2013.01); H01L 2924/1451 (2013.01); H01L 2924/19041 (2013.01); H01L 2924/30107 (2013.01);
Abstract

In a semiconductor device in which a plurality of semiconductor chips are stacked, performance is enhanced without deteriorating productivity. The semiconductor device has a first semiconductor substrate having a first surface and a second surface opposite the first surface, a first insulating film formed on the first surface, a first hole formed in the first insulating film and partially extending into the first semiconductor substrate, a second hole formed in the second surface, a first electrode entirely filling the first hole, and a conductive film conformally formed in the second hole. The conductive film is electrically connected to a bottom surface of the first electrode and leaves a third hole in the first semiconductor substrate open. The third hole is configured to receive a second electrode of a second semiconductor substrate.


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