The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 19, 2016

Filed:

Jul. 26, 2013
Applicant:

Nanya Technology Corporation, Tao-Yuan Hsien, TW;

Inventors:

An Hsiung Liu, Taoyuan County, TW;

Ya Chih Wang, New Taipei, TW;

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/58 (2006.01); H01L 23/48 (2006.01); H01L 21/033 (2006.01);
U.S. Cl.
CPC ...
H01L 23/48 (2013.01); H01L 21/0337 (2013.01); H01L 2924/0002 (2013.01);
Abstract

A method for semiconductor self-aligned patterning includes steps of providing a substrate comprising a first layer and a second layer, wherein the first layer is on top of the second layer; removing a portion of the first layer to form a first pattern; depositing a first conformal layer on the first pattern; depositing a second conformal layer on the first conformal layer; removing a portion of the second conformal layer to expose a portion of the first conformal layer; and thinning the first conformal layer and the second conformal layer alternatively to form a second pattern. A semiconductor self-aligned structure is also provided.


Find Patent Forward Citations

Liu, An. (2016). Method for semiconductor self-aligned patterning (U.S. Patent No. 9318412). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9318412

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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